HfSe2 and ZrSe2: Two-dimensional semiconductors with native high-k oxides
نویسندگان
چکیده
Department of Electrical Engineering, Stanford University, Stanford, CA 94305, USA. Department of Physics, Stanford University, Stanford, CA 94305, USA. Stanford Institute for Materials and Energy Sciences, Stanford Linear Accelerator Center National Accelerator Laboratory, Menlo Park, CA 94025, USA. Department of Materials Science and Engineering, Stanford University, Stanford, CA 94305, USA. Department of Applied Physics, Stanford University, Stanford, CA 94305, USA. Precourt Institute for Energy, Stanford University, Stanford, CA 94305, USA. *Present address: College of Optoelectronic Science and Engineering, National University of Defense Technology, Changsha 410073, China. †Corresponding author. Email: [email protected]
منابع مشابه
HfSe2 and ZrSe2: Two-dimensional semiconductors with native high-κ oxides
The success of silicon as a dominant semiconductor technology has been enabled by its moderate band gap (1.1 eV), permitting low-voltage operation at reduced leakage current, and the existence of SiO2 as a high-quality "native" insulator. In contrast, other mainstream semiconductors lack stable oxides and must rely on deposited insulators, presenting numerous compatibility challenges. We demons...
متن کاملInterfacing 2D Semiconductors with Functional Oxides: Fundamentals, Properties, and Applications
Two-dimensional semiconductors, such as transition-metal dichalcogenides (TMDs) and black phosphorous (BP), have found various potential applications in electronic and opto-electronic devices. However, several problems including low carrier mobility and low photoluminescence efficiencies still limit the performance of these devices. Interfacing 2D semiconductors with functional oxides provides ...
متن کاملMetastable resistance-anisotropy orientation of two-dimensional electrons in high Landau levels.
In half-filled high Landau levels, two-dimensional electron systems possess collective phases which exhibit a strongly anisotropic resistivity tensor. A weak, but as yet unknown, rotational symmetry-breaking potential native to the host semiconductor structure is necessary to orient these phases in macroscopic samples. Making use of the known external symmetry-breaking effect of an in-plane mag...
متن کاملElectron Gases at Oxide Interfaces
1027 Abstract Two-dimensional electron gases (2DEGs) based on conventional semiconductors such as Si or GaAs have played a pivotal role in fundamental science and technology. The high mobilities achieved in 2DEGs enabled the discovery of the integer and fractional quantum Hall effects and are exploited in high-electron-mobility transistors. Recent work has shown that 2DEGs can also exist at oxi...
متن کاملObservation of a two-dimensional liquid of Frhlich polarons at the bare SrTiO3 surface
The polaron is a quasi-particle formed by a conduction electron (or hole) together with its self-induced polarization in a polar semiconductor or an ionic crystal. Among various polarizable examples of complex oxides, strontium titanate (SrTiO3) is one of the most studied. Here we examine the carrier type and the interplay of inner degrees of freedom (for example, charge, lattice, orbital) in S...
متن کامل