HfSe2 and ZrSe2: Two-dimensional semiconductors with native high-k oxides

نویسندگان

  • Michal J. Mleczko
  • Chaofan Zhang
  • Hye Ryoung Lee
  • Hsueh-Hui Kuo
  • Blanka Magyari-Köpe
  • Robert G. Moore
  • Zhi-Xun Shen
  • Ian R. Fisher
  • Yoshio Nishi
  • Eric Pop
چکیده

Department of Electrical Engineering, Stanford University, Stanford, CA 94305, USA. Department of Physics, Stanford University, Stanford, CA 94305, USA. Stanford Institute for Materials and Energy Sciences, Stanford Linear Accelerator Center National Accelerator Laboratory, Menlo Park, CA 94025, USA. Department of Materials Science and Engineering, Stanford University, Stanford, CA 94305, USA. Department of Applied Physics, Stanford University, Stanford, CA 94305, USA. Precourt Institute for Energy, Stanford University, Stanford, CA 94305, USA. *Present address: College of Optoelectronic Science and Engineering, National University of Defense Technology, Changsha 410073, China. †Corresponding author. Email: [email protected]

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تاریخ انتشار 2017